Self-rectifying effect in Au/Al₂O₃/Si resistive memory structure

To solve the crosstalk problem when integration density of resistive random access memory (RRAM) devices increase, RRAM with self-rectifying function is required. Herein, Au/10 nm Al 2 O 3 /heavily doped p-type Si (p++-Si) structure was fabricated, and bipolar switching effect were investigated. A rectification 6.5 × 10 under ±5 V at low-resistive state (LRS) observed. The rectifying explained by energy band diagrams electrical conduction mechanism LRS negative bias fitted space charge limited (SCLC) model. Finally, endurance retention properties tested. This work would provide insights for further research on device effect, which can alleviate without additional elements in integrated circuit.